A new publication has been released in SPIE Proceedings. It presents a large scale model of ultrashort laser modification of semiconductors that was developed at Hilase to predict the changes of silicon material upon intense pulsed laser irradiation. A more complete publication aiming to demonstrate the level of prediction we have reached is under preparation.
- The link on SPIE website
- The paper on ResearchGate.net.
- The paper is also available on our server. However, this link could be removed upon demand of SPIE in case.